A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices-Reference-Cited by-同舟云学术

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

Published:2013-09-01 Issue:44 Volume:25 Page:6423-6429
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Jinjoo¹,Lee Seunghyup²,Lee Junghan¹,Yong Kijung¹

Affiliation:

1. Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering; POSTECH (Pohang University of Science and Technology); Pohang 790-784 Korea

2. Advanced Device Laboratory; Samsung Advanced Institute of Technology; Yongin Gyeonggi-do 446-712 Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference57 articles.

1. Logic Gates and Computation from Assembled Nanowire Building Blocks

2. Nanowire electronic and optoelectronic devices

3. The fourth element

4. Resistance switching memories are memristors

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