High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films-Reference-Cited by-同舟云学术

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High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films

Published:2013-07-01 Issue:33 Volume:25 Page:4663-4667
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Naab Benjamin D.,Himmelberger Scott,Diao Ying,Vandewal Koen,Wei Peng,Lussem Björn,Salleo Alberto,Bao Zhenan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201205098/fullpdf

Reference36 articles.

1. Materials and Applications for Large Area Electronics: Solution-Based Approaches

2. From computational discovery to experimental characterization of a high hole mobility organic crystal

3. Colloquium: Electronic transport in single-crystal organic transistors

4. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

5. Microcantilevers and organic transistors: two promising classes of label-free biosensing devices which can be integrated in electronic circuits

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