Chemical Patterning of High-Mobility Semiconducting 2D Bi2 O2 Se Crystals for Integrated Optoelectronic Devices-Reference-Cited by-同舟云学术

Chemical Patterning of High-Mobility Semiconducting 2D Bi2 O2 Se Crystals for Integrated Optoelectronic Devices

Published:2017-10-12 Issue:44 Volume:29 Page:1704060
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wu Jinxiong¹,Liu Yujing¹,Tan Zhenjun²,Tan Congwei²,Yin Jianbo¹,Li Tianran¹,Tu Teng¹,Peng Hailin¹

Affiliation:

1. Center for Nanochemistry; Beijing Science and Engineering Center for Nanocarbons; Beijing National Laboratory for Molecular Sciences; College of Chemistry and Molecular Engineering; Peking University; Beijing 100871 P. R. China

2. Academy for Advanced Interdisciplinary Studies; Peking University; Beijing 100871 P. R. China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

China Postdoctoral Science Foundation

National Program for Support of Top-Notch Young Professionals

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference19 articles.

1. Nanomaterials in transistors: From high-performance to thin-film applications

2. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

3. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

4. Wafer-Scale Graphene Integrated Circuit

5. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

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