Tunable Electroluminescence in Planar Graphene/SiO2Memristors-Reference-Cited by-同舟云学术

Tunable Electroluminescence in Planar Graphene/SiO2Memristors

Published:2013-08-06 Issue:39 Volume:25 Page:5593-5598
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

He Congli¹,Li Jiafang²,Wu Xing³,Chen Peng¹,Zhao Jing¹,Yin Kuibo³,Cheng Meng¹,Yang Wei¹,Xie Guibai¹,Wang Duoming¹,Liu Donghua¹,Yang Rong¹,Shi Dongxia¹,Li Zhiyuan²,Sun Litao³,Zhang Guangyu¹

Affiliation:

1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

2. Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

3. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering; Southeast University; 210096 Nanjing China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201302447/fullpdf

Reference38 articles.

1. The missing memristor found

2. Memristor-The missing circuit element

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Cited by 70 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon-based memristors for resistive random access memory and neuromorphic applications;Chip;2024-06

2. Monolayer Vacancy‐Induced MXene Memory for Write‐Verify‐Free Programming;Small;2024-04-29

3. Planar nanoscale vacuum channel transistors based on resistive switching;Nanotechnology;2024-03-07

4. Graphene-based RRAM devices for neural computing;Frontiers in Neuroscience;2023-10-05

5. Interfacing Biology and Electronics with Memristive Materials;Advanced Materials;2023-06-29