Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode-Reference-Cited by-同舟云学术

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Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode

Published:2017-06-06 Issue:29 Volume:29 Page:1701412
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zou Haiyang¹,Li Xiaogan¹²,Peng Wenbo¹,Wu Wenzhuo³,Yu Ruomeng¹,Wu Changsheng¹,Ding Wenbo¹,Hu Fei¹,Liu Ruiyuan¹,Zi Yunlong¹,Wang Zhong Lin¹⁴

Affiliation:

1. School of Materials Science and Engineering; Georgia Institute of Technology; Atlanta GA 30332-0245 USA

2. School of Electronic Science and Technology; Institute for sensing Technologies; Dalian University of Technology; Dalian Liaoning 116024 China

3. School of Industrial Engineering; Purdue University; West Lafayette IN 47907-2023 USA

4. Beijing Institute of Nanoenergy and Nanosystems; Chinese Academy of Sciences; Beijing 100083 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference42 articles.

1. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

2. Physics of Semiconductor Devices

3. Piezotronic effect enhanced performance of Schottky-contacted optical, gas, chemical and biological nanosensors

4. Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging

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