Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors-Reference-Cited by-同舟云学术

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

Author:

Chee Sang-Soo¹,Seo Dongpyo¹,Kim Hanggyu¹,Jang Hanbyeol¹,Lee Seungmin²,Moon Seung Pil³,Lee Kyu Hyoung⁴,Kim Sung Wng⁵,Choi Hyunyong²,Ham Moon-Ho¹^ORCID

Affiliation:

1. School of Materials Science and Engineering; Gwangju Institute of Science & Technology (GIST); Gwangju 61005 Republic of Korea

2. School of Electrical and Electronic Engineering; Yonsei University; Seoul 03722 Republic of Korea

3. KEPCO Research Institute; Korea Electric Power Corporation; Naju 58214 Republic of Korea

4. Department of Materials Science and Engineering; Yonsei University; Seoul 03722 Republic of Korea

5. Department of Energy Science; Sungkyunkwan University; Suwon 16419 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science ICT and Future Planning

Ministry of Education

Korea Electric Power Corporation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference45 articles.

Cited by 187 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献