High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics-Reference-Cited by-同舟云学术

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Published:2016-11-07 Issue:2 Volume:29 Page:1604744
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhao Baodan¹,Abdi-Jalebi Mojtaba¹,Tabachnyk Maxim¹,Glass Hugh¹,Kamboj Varun S.¹,Nie Wanyi²,Pearson Andrew J.¹,Puttisong Yuttapoom¹,Gödel Karl C.¹,Beere Harvey E.¹,Ritchie David A.¹,Mohite Aditya D.²,Dutton Siân E.¹,Friend Richard H.¹,Sadhanala Aditya¹

Affiliation:

1. Cavendish Laboratory; University of Cambridge; JJ Thomson Avenue Cambridge CB3 0HE UK

2. Los Alamos National Laboratory; Los Alamos NM 87545 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference68 articles.

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4. High-performance photovoltaic perovskite layers fabricated through intramolecular exchange

5. http://www.nrel.gov/ncpv/images/efficiency_chart.jpg 2016

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