Role of Charge Traps in the Performance of Atomically Thin Transistors-Reference-Cited by-同舟云学术

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Role of Charge Traps in the Performance of Atomically Thin Transistors

Published:2017-03-15 Issue:19 Volume:29 Page:1605598
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Amit Iddo¹,Octon Tobias J.²,Townsend Nicola J.¹,Reale Francesco³,Wright C. David²,Mattevi Cecilia³,Craciun Monica F.²,Russo Saverio¹

Affiliation:

1. Centre for Graphene Science; Department of Physics; University of Exeter; Stocker Road Exeter EX4 4QL UK

2. Centre for Graphene Science; Department of Engineering; University of Exeter; Stocker Road Exeter EX4 4QF UK

3. Department of Materials; Imperial College London; London SW7 2AZ UK

Funder

Horizon 2020

Engineering and Physical Sciences Research Council

Royal Society

Leverhulme Trust

Defence Science and Technology Laboratory

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Nanostructured Photodetectors: From Ultraviolet to Terahertz

4. Two-dimensional material nanophotonics

5. Graphene-analogous low-dimensional materials

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