Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors-Reference-Cited by-同舟云学术

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Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors

Published:2013-06-20 Issue:32 Volume:25 Page:4445-4451
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Han Ning,Wang Fengyun,Hou Jared J.,Yip Sen Po,Lin Hao,Xiu Fei,Fang Ming,Yang Zaixing,Shi Xiaoling,Dong Guofa,Hung Tak Fu,Ho Johnny C.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201301362/fullpdf

Reference38 articles.

1. Quantized Conductance in an InSb Nanowire

2. Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

3. Electron Trapping in InP Nanowire FETs with Stacking Faults

4. Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning

5. A III–V nanowire channel on silicon for high-performance vertical transistors

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