Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators-Reference-Cited by-同舟云学术

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

Published:2013-05-06 Issue:23 Volume:25 Page:3222-3226
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Stoliar Pablo,Cario Laurent,Janod Etiene,Corraze Benoit,Guillot-Deudon Catherine,Salmon-Bourmand Sabrina,Guiot Vincent,Tranchant Julien,Rozenberg Marcelo

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201301113/fullpdf

Reference43 articles.

1. Taming the Mott Transition for a Novel Mott Transistor

2. Emergent phenomena at oxide interfaces

3. http://www.itrs.net/

4. An Emergent Change of Phase for Electronics

5. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

Cited by 118 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Picosecond Femtojoule Resistive Switching in Nanoscale VO₂ Memristors;ACS Nano;2024-08-08

2. Electric Field-Induced Mott Insulator-to-Metal Transition and Memristive Behaviour in Epitaxial V$$_2$$O$$_3$$ Thin Film;Journal of Electronic Materials;2024-07-12

3. A Trivial Implementation of an Analog Spiking Neuron Using a Memristor, for Less than $1;Memristors - The Fourth Fundamental Circuit Element - Theory, Device, and Applications;2024-06-12

4. Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V₂O₃ Films and the Influence of its Variability on Scaled Devices;Advanced Physics Research;2024-05-22

5. Tuning the Intrinsic Stochasticity of Resistive Switching in VO₂ Microresistors;Nano Letters;2024-05-17