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Ferroelectric Domain Wall Injection

Published:2013-10-18 Issue:2 Volume:26 Page:293-298
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Whyte Jonathan R.¹,McQuaid Raymond G. P.¹,Sharma Pankaj²,Canalias Carlota³,Scott James F.⁴,Gruverman Alexei²,Gregg J. Marty¹

Affiliation:

1. Centre for Nanostructured Media School of Mathematics and Physics; Queen's University Belfast; Belfast BT7 1NN United Kingdom

2. Department of Physics and Astronomy; University of Nebraska; Lincoln Nebraska 68588-0299 USA

3. Department of Applied Physics; Royal Institute of Technology; Roslagstullsbacken 21 10691 Stockholm Sweden

4. Department of Physics; Cavendish Laboratory; J. J. Thomson Ave. Cambridge CB3 0HE England, UK

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201303567/fullpdf

Reference46 articles.

1. Conduction at domain walls in oxide multiferroics

2. Multiferroic Domain Boundaries as Active Memory Devices: Trajectories Towards Domain Boundary Engineering

3. Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

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2. Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO ₃ thin films;Science;2023-12-15

3. Ferroelectric Domain Wall Memory and Logic;ACS Applied Electronic Materials;2023-08-22

4. Ultralow Tip‐Force Driven Sizable‐Area Domain Manipulation through Transverse Flexoelectricity;Advanced Materials;2023-07-20

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