Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO <sub>3</sub> thin films-Reference-Cited by-同舟云学术

Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO ₃ thin films

Published:2023-12-15 Issue:6676 Volume:382 Page:1265-1269
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Liu Chenhan¹^ORCID,Si Yangyang²^ORCID,Zhang Hua³^ORCID,Wu Chao³,Deng Shiqing⁴^ORCID,Dong Yongqi⁵^ORCID,Li Yijie²^ORCID,Zhuo Meng¹,Fan Ningbo⁶^ORCID,Xu Bin⁶^ORCID,Lu Ping¹^ORCID,Zhang Lifa⁷^ORCID,Lin Xi²^ORCID,Liu Xingjun²,Yang Juekuan³^ORCID,Luo Zhenlin⁵^ORCID,Das Sujit⁸^ORCID,Bellaiche Laurent⁹^ORCID,Chen Yunfei³^ORCID,Chen Zuhuang²¹⁰^ORCID

Affiliation:

1. Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing 210023, P. R. China.

2. School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, P. R. China.

3. Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211100, P. R. China.

4. Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China.

5. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.

6. Institute of Theoretical and Applied Physics, Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu 215006, P. R. China.

7. Phonon Engineering Research Center, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, P. R. China.

8. Material Research Centre, Indian Institute of Science, Bangalore 560012, India.

9. Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA.

10. Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, Guangdong 518055, P.R. China.

Abstract

Effective control of heat transfer is vital for energy saving and carbon emission reduction. In contrast to achievements in electrical conduction, active control of heat transfer is much more challenging. Ferroelectrics are promising candidates for thermal switching as a result of their tunable domain structures. However, switching ratios in ferroelectrics are low (<1.2). We report that high-quality antiferroelectric PbZrO 3 epitaxial thin films exhibit high-contrast (>2.2), fast-speed (<150 nanoseconds), and long-lifetime (>10 7 ) thermal switching under a small voltage (<10 V). In situ reciprocal space mapping and atomistic modelings reveal that the field-driven antiferroelectric-ferroelectric phase transition induces a substantial change of primitive cell size, which modulates phonon-phonon scattering phase space drastically and results in high switching ratio. These results advance the concept of thermal transport control in ferroic materials.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Link

https://www.science.org/doi/pdf/10.1126/science.adj9669

Reference49 articles.

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