Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites-Reference-Cited by-同舟云学术

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Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Published:2014-09-10 Issue:42 Volume:26 Page:7170-7177
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Baeg Kang-Jun¹,Kim Myung-Gil¹²,Song Charles K.¹,Yu Xinge¹,Facchetti Antonio³,Marks Tobin J.¹

Affiliation:

1. Department of Chemistry and the Materials Research Center; Northwestern University; 2145 Sheridan Road Evanston IL 60208 USA

2. Department of Chemistry; Chung-Ang University; 84 Heukseok-ro Dongjak-gu, Seoul 156-756 Republic of Korea

3. Polyera Corporation; 8045 Lamon Avenue Skokie IL 60077 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference57 articles.

1. Fully Flexible Solution-Deposited ZnO Thin-Film Transistors

2. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. Low-temperature, solution-processed metal oxide thin film transistors

5. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

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3. Diverse role of zirconia in developing polymeric composites;Polymer Bulletin;2023-11-06

4. Charge-trap memory effect in spray deposited ZnO-based electrolyte-gated transistors operating at low voltage;Current Applied Physics;2023-09

5. Side-Chain Engineering of Polystyrene Dielectrics Toward High-Performance Photon Memories and Artificial Synapses;Chemistry of Materials;2022-07-12

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