A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Published:2019-11-28 Issue:2 Volume:32 Page:1906000
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lyu Juan¹,Pei Jing¹,Guo Yuzheng²,Gong Jian³,Li Huanglong¹^ORCID

Affiliation:

1. Department of Precision Instrument Center for Brain Inspired Computing Research Tsinghua University Beijing 100084 China

2. School of Electrical Engineering and Automation Wuhan University Wuhan 430072 China

3. School of Physics and Technology Inner Mongolia University Hohhot 010021 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201906000

Reference57 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Electronics based on two-dimensional materials

3. Two-dimensional materials and their prospects in transistor electronics

4. Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

5. Single-layer MoS2 transistors

Cited by 117 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral graphene/ MoS2 heterostructures for steep-slope Dirac-source field-effect transistors;Physical Review B;2024-09-05

2. Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit;Computational Materials Today;2024-09

3. Electron-phonon scattering in two-dimensional Dirac-source transistors;Physical Review Applied;2024-08-26

4. Device Transport Characteristics of Monolayer SnS₂ and HfS₂ Field-Effect Transistors with Semimetal Contacts;The Journal of Physical Chemistry C;2024-08-15

5. Phonon-assisted charge carriers thermalization in semiconductor Si and metallic silicide NiSi2, CoSi2: A non-adiabatic molecular dynamics study;Journal of Applied Physics;2024-07-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3