Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene-Reference-Cited by-同舟云学术

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

Published:2016-07-14 Issue:37 Volume:28 Page:8177-8183
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Nguyen Van Luan¹²³,Perello David J.¹,Lee Seunghun⁴,Nai Chang Tai⁵,Shin Bong Gyu¹,Kim Joong-Gyu¹²³,Park Ho Yeol⁴,Jeong Hu Young⁶,Zhao Jiong¹,Vu Quoc An¹²³,Lee Sang Hyub¹²³,Loh Kian Ping⁵,Jeong Se-Young⁴,Lee Young Hee¹²³

Affiliation:

1. Center for Integrated Nanostructure Physics; Institute for Basic Science (IBS); Sungkyunkwan University; Suwon 16419 Republic of Korea

2. Department of Energy Science; Sungkyunkwan University; Suwon 16419 Republic of Korea

3. Department of Physics; Sungkyunkwan University; Suwon 16419 Republic of Korea

4. Department of Cogno-mechatronics Engineering; Pusan National University; Busan 46241 Republic of Korea

5. Department of Chemistry and Centre for Advanced 2D Materials (CA2DM); National University of Singapore; 3 Science Drive 3 Singapore 117543

6. UNIST Central Research Facilities; Ulsan National Institute of Science and Technology (UNIST); Ulsan 689-798 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference38 articles.

1. Direct observation of a widely tunable bandgap in bilayer graphene

2. Dual-gated bilayer graphene hot-electron bolometer

3. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

4. Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

5. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

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