Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio-Reference-Cited by-同舟云学术

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Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

Published:2015-08-28 Issue:9 Volume:9 Page:9034-9042
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Si Young¹,Duong Dinh Loc,Vu Quoc An,Jin Youngjo,Kim Philip¹,Lee Young Hee

Affiliation:

1. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

Funder

Ministry of Trade, Industry and Energy

Division of Materials Research

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b03130

Reference37 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Chiral tunnelling and the Klein paradox in graphene

4. Boron nitride substrates for high-quality graphene electronics

5. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

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4. A DFT study on the mechanical, electronic, thermodynamic, and optical properties of GaN and AlN counterparts of biphenylene network;Materials Today Communications;2023-12

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