Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy-Reference-Cited by-同舟云学术

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Published:2018-05-29 Issue:30 Volume:30 Page:1801639
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhao Shishun¹,Wang Lei²,Zhou Ziyao¹,Li Chunlei¹,Dong Guohua¹,Zhang Le¹,Peng Bin¹,Min Tai²,Hu Zhongqiang¹,Ma Jing³,Ren Wei¹,Ye Zuo‐Guang¹⁴,Chen Wei⁵⁶,Yu Pu⁷,Nan Ce‐Wen³,Liu Ming¹

Affiliation:

1. Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric Research School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China

2. Center for Spintronics and Quantum System State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 China

3. State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering Tsinghua University Beijing 100084 China

4. Department of Chemistry and 4D LABS Simon Fraser University Burnaby British Columbia V5A 1S5 Canada

5. Materials Science Division Argonne National Laboratory 9700 Cass Avenue Lemont IL 60439 USA

6. Institute for Molecular Engineering The University of Chicago 5640 South Ellis Avenue Chicago IL 60637 USA

7. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China

Funder

National Natural Science Foundation of China

Natural Sciences and Engineering Research Council of Canada

U.S. Department of Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201801639

Reference40 articles.

1. Magnetoelectric Charge Trap Memory

2. Electrical control of the ferromagnetic phase transition in cobalt at room temperature

3. Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

4. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

5. Electric-field control of ferromagnetism

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