Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1-Reference-Cited by-同舟云学术

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Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1

Published:2010-07-21 Issue:32 Volume:22 Page:3598-3602
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Smith Jeremy,Bashir Aneeqa,Adamopoulos George,Anthony John E.,Bradley Donal D. C.,Heeney Martin,McCulloch Iain,Anthopoulos Thomas D.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201000195/fullpdf

Reference31 articles.

1. Recent Progress in Organic Electronics: Materials, Devices, and Processes

2. Semiconductors for organic transistors

3. A comprehensive review of ZnO materials and devices

4. Recent progress in transparent oxide semiconductors: Materials and device application

5. A ferroelectric transparent thin‐film transistor

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