High-performance ambipolar field-effect transistors with a Ph-BTBT-10/PMMA/ZnO structure-Reference-Cited by-同舟云学术

High-performance ambipolar field-effect transistors with a Ph-BTBT-10/PMMA/ZnO structure

Published:2023 Issue:37 Volume:11 Page:12583-12589
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ji Xiangyu¹,Zheng Jiayuan¹,Lin Tianci¹,Liu Lingyi¹,Wei Huili¹,Chen Chang¹,Xiong Juan²,Wang Xianbao¹^ORCID,Li Jinhua¹,Yan Feng³^ORCID

Affiliation:

1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China

2. Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, P. R. China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China

Abstract

Ambipolar FETs were designed and fabricated based on the Ph-BTBT-10/PMMA/ZnO structure by a solution process.

Funder

Department of Science and Technology, Hubei Provincial People's Government

Key Laboratory of Optoelectronic Chemical Materials and Devices

Overseas Expertise Introduction Project for Discipline Innovation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry