Origin of Leakage Paths Driven by Electric Fields in Al-Doped TiO2Films-Reference-Cited by-同舟云学术

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Origin of Leakage Paths Driven by Electric Fields in Al-Doped TiO2Films

Published:2014-11-03 Issue:48 Volume:26 Page:8225-8230
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Gyeong-Su¹,Park Seong Yong¹,Heo Sung¹,Kwon Ohseong²,Cho Kyuho²,Han Kwan-Young³,Kang Sung Jin⁴,Yoon Aram⁴,Kim Miyoung⁴

Affiliation:

1. Samsung Advanced Institute of Technology; San 14-1, Nongseo-Ri, Kiheung-Eub Yongin-Si Kyeonggi-Do 446-712 South Korea

2. Semiconductor R&D Center; Samsung Electronics Co. Ltd.; San 16, Banwol-Dong Hwasung-City Kyeonggi-Do 447-701 South Korea

3. Samsung Display; Samsung St 181, Tangjeong-Myeon Asan-City Chungcheongnam-Do 330-300 South Korea

4. Department of Materials Science and Engineering; Seoul National University; Seoul 151-747 South Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor

2. Conduction mechanisms in amorphous and crystalline Ta2O5 thin films

3. Leakage current in high dielectric oxides: Role of defect-induced energies

4. Very high density RF MIM capacitors (17 fF/μm/sup 2/) using high-/spl kappa/ Al/sub 2/O3 doped Ta/sub 2/O/sub 5/ dielectrics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition;Applied Surface Science;2017-12

2. Effect of multiple times pre-sintering on the dielectric properties of TiO2/glass composite;Journal of Materials Science: Materials in Electronics;2016-08-19

3. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique;Journal of Applied Physics;2016-06-28

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