Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Author:

Tao Yuan1ORCID,Hu Zhi Fu2,Fan Yong1,Liu Ya Nan2,He Mei Lin2,Cheng Yu Jian1ORCID,Zhang Bo1

Affiliation:

1. School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of China Chengdu China

2. Modeling DepartmentHebei Semiconductor Research Institute Shijiazhuang China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Millimeter-Wave single-pole-double-throw switch design with Stacked-FET topology using network cascading analysis;AEU - International Journal of Electronics and Communications;2023-12

2. A circuit‐based neuro‐space mapping technique for small‐signal modeling of multi‐gate GaN HEMT switches;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-13

3. A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm;International Journal of RF and Microwave Computer-Aided Engineering;2022-06-08

4. A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-03-26

5. Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model;International Journal of RF and Microwave Computer-Aided Engineering;2020-03-04

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