Ultrathin cobalt silicide film formation on Si(100)-Reference-Cited by-同舟云学术

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Ultrathin cobalt silicide film formation on Si(100)

Published:2003 Issue:2 Volume:35 Page:184-187
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Hwang I. Y.,Kim J. H.,Oh S. K.,Kang H. J.,Lee Y. S.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Growth of cobalt and cobalt disilicide on Si(100)

2. Amorphous silicide formation by thermal reaction: A comparison of several metal–silicon systems

3. Solid phase reactions in free‐standing layered M‐Si (M=Ti, V, Cr, Co) films

4. On the thermodynamical driving force during ion mixing of the Co‐Si system

5. The growth of an intermediate CoSi phase during the formation of epitaxial CoSi2 by solid phase reaction

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of CoSi Oxidation and Passivation During Silicide Selective Etching on Junction Leakage: Applications to Schottky Diodes Devices;ECS Journal of Solid State Science and Technology;2024-05-31

2. Hydrogen Production by Hydrogen Sulfide Decomposition Using Cobalt Catalysts Doped in SBA-15 Synthetized by EISA Method;Catalysis Letters;2024-02-15

3. A Cobalt-Containing Polysilane as an Effective Solid-State Catalyst for the Hydrosilylation of Alkenes;Organic Process Research & Development;2023-01-09

4. Characteristics of Cobalt Thin Films Deposited by Very High Frequency Plasma Enhanced Atomic Layer Deposition (60 and 100 MHz) Using Cobaltocene (Co(Cp)2)/NH3;Journal of Nanoscience and Nanotechnology;2021-03-01

5. Interfacial layer formation during high-temperature deposition of Sm-Co magnetic thin films on Si (100) substrates;Intermetallics;2019-03

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