The illumination effects on the current conduction mechanisms of the Au/( <scp> Er <sub>2</sub> O <sub>3</sub> </scp> : <scp>PVC</scp> )/ <scp>n‐Si</scp> ( <scp>MPS</scp> ) Schottky diodes-Reference-Cited by-同舟云学术

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The illumination effects on the current conduction mechanisms of the Au/( Er ₂ O ₃ : PVC )/ n‐Si ( MPS ) Schottky diodes

Published:2022-04-30 Issue:27 Volume:139 Page:
ISSN:0021-8995
Container-title:Journal of Applied Polymer Science
language:en
Short-container-title:J of Applied Polymer Sci

Author:

Altındal Şemsettin¹,Azizian‐Kalandaragh Yashar²³,Ulusoy Murat¹^ORCID,Pirgholi‐Givi Gholamreza⁴

Affiliation:

1. Department of Physics, Faculty of Sciences Gazi University Ankara Turkey

2. Photonics Application and Research Center Gazi University Ankara Turkey

3. Photonics Department, Applied Science Faculty Gazi University Ankara Turkey

4. Department of Physics University of Guilan Rasht Iran

Publisher

Wiley

Subject

Materials Chemistry,Polymers and Plastics,Surfaces, Coatings and Films,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/app.52497

Reference41 articles.

1. Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer

2. Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

3. The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

4. Electrical and fotoconducting characterization of Al/coumarin:ZnO/Al novel organic-inorganic hybrid photodiodes

5. Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

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1. The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities;ACS Omega;2024-07-11

2. Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer;Physica B: Condensed Matter;2024-07

3. Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities;Journal of Electronic Materials;2024-06-12

4. Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure;Journal of Materials Science: Materials in Electronics;2024-05

5. Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations;Physica Scripta;2024-04-29

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