Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer-Reference-Cited by-同舟云学术

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Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer

Published:2024-07 Issue: Volume:685 Page:416026
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Seymen Halil^ORCID,Berk Niyazi^ORCID,Özerli Halil,Karataş Şükrü

Publisher

Elsevier BV

Reference52 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Metal–SemiconductorContacts;Rhoderick,1988

3. Investigation of electrical, dielectric and interface state densities of al/p-Si structures with PTCDA interlayer under different light intensities

4. Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Si and SiO2 in Optoelectronic Device Fabrication;Journal of Molecular Structure;2024-11

2. Investigation of electrical properties at ambient and high temperature of Al 2 O 3 based Schottky barrier diodes structure using I-V, C-V and G/ω-V measurements;2024-09-06

3. Perovskite Co-Doping Lanio3 Quantum Dots Modified Nio/Batio3 Transparent Pn Junction Towards Photovoltaic Enhancement Via Bmetallic Synergism;2024

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