Atomic‐scale interface engineering for two‐dimensional materials based field‐effect transistors

Abstract

AbstractTwo‐dimensional (2D) materials with free of dangling bonds have the potential to serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due to their atomic‐thin and excellent electronic properties. However, the performance of 2D materials‐based FETs is still dictated by the interface between electrodes/dielectrics and 2D materials. Several technical challenges such as improving device stability, reducing contact resistance, and advancing mobility need to be overcome. Herein, we focus on the effects of atomic‐scale interface engineering on the contact resistance and dielectric layer for 2D FETs. Universal strategies we consider to achieve ohmic contact and develop high‐quality, defect‐free dielectric layers are provided. Furthermore, advancing the performance of 2D materials‐based FETs and binding to silicon substrates are briefly analyzed.