Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena-Reference-Cited by-同舟云学术

Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

Published:2005 Issue:1 Volume:16 Page:81-94
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Filicori F.,Santarelli A.,Traverso P. A.,Raffo A.,Vannini G.,Pagani M.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference37 articles.

1. A Charge Control Relation for Bipolar Transistors

2. A MESFET Model for Use in the Design of GaAs Integrated Circuits

3. GaAs FET device and circuit simulation in SPICE

4. Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics

5. , and , Technology independent large-signal nonquasi-static FET models by direct construction from automatically characterized device data, Proc 21st EuMC, Stuttgart, 1991.

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