Monte‐Carlo‐based simulation study of ion‐implantation in gallium oxide devices-Reference-Cited by-同舟云学术

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Monte‐Carlo‐based simulation study of ion‐implantation in gallium oxide devices

Published:2022-08-17 Issue:12 Volume:54 Page:1203-1210
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surface & Interface Analysis

Author:

Kachhawa Pharyanshu¹²^ORCID,Chaturvedi Nidhi¹²

Affiliation:

1. CSIR ‐ Central Electronics Engineering Research Institute Pilani Rajasthan India

2. Academy of Scientific and Innovative Research (AcSIR) Ghaziabad Uttar Pradesh India

Funder

Council of Scientific and Industrial Research, India

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.7145

Reference29 articles.

1. Handbook of Semiconductor Manufacturing Technology

2. Ion Implantation: Basics to Device Fabrication

3. Ion implantation in β-Ga2O3: Physics and technology

4. Ion implantation in semiconductors—Part I: Range distribution theory and experiments

5. J. F. Ziegler (ed). Handbook of ION IMPLANTATION TECHNOLOGY. North-Holland, Elsevier Science Publishers B. V., 1992. 700 S. 307 Abb. 28 Tab. ISBN 0-444-89735-6

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1. Correlating the electronic structures of β-Ga2O3 to its crystal tilts induced defects at nanoscale;Materials Today Physics;2024-08

2. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

3. Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor;physica status solidi (a);2023-11-05

4. Effect of H, He and Ar irradiation on β-Ga2O3 material;Digest Journal of Nanomaterials and Biostructures;2023

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