A circuit‐topology and cascade‐based de‐embedding for GaN transistor microwave characterization-Reference-Cited by-同舟云学术

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A circuit‐topology and cascade‐based de‐embedding for GaN transistor microwave characterization

Published:2022-07-13 Issue:11 Volume:64 Page:1931-1936
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Micro & Optical Tech Letters

Author:

Huang Fengyi¹^ORCID,Wei Zhennan²,Tang Xusheng¹,Zhang Youming¹,Jiang Nan³

Affiliation:

1. School of Cyber Science and Engineering Southeast University Nanjing China

2. School of Information Science and Engineering Southeast University Nanjing China

3. RFIC Department S‐TEK Research Center Shanghai China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.33401

Reference17 articles.

1. KoolenMCAM GeelenJAM VersleijenMPJG.An improved de‐embedding technique for on‐wafer high‐frequency characterization.Proceedings of IEEE Bipolar Circuits Technology Meeting pp.188‐191 September1991;Minneapolis MN USA.

2. An Improved Ultrawideband Open-Short De-Embedding Method Applied up to 220 GHz

3. A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs

4. A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs

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