Narrowband Pure Near‐Infrared (NIR) Ir(III) Complexes for Solution‐Processed Organic Light‐Emitting Diode (OLED) with External Quantum Efficiency Over 16 %

Author:

Yang Xiaolong1,Xu Shipan1,Zhang Yan2,Zhu Chengyun1,Cui Linsong3,Zhou Guijiang1,Chen Zhao2,Sun Yuanhui1ORCID

Affiliation:

1. School of Chemistry Xi'an Key Laboratory of Sustainable Energy Material Chemistry Engineering Research Center of Energy Storage Materials and Devices Ministry of Education Xi'an Jiaotong University Xi'an 710049 P. R. China

2. School of Applied Physics and Materials Wuyi University Jiangmen 529020 P. R. China

3. CAS Key Laboratory of Soft Matter Chemistry Department of Polymer Science and Engineering University of Science and Technology of China Hefei 230026 P. R. China

Abstract

AbstractHighly efficient near‐infrared (NIR) emitters have significant applications in medical and optoelectronic fields, but the development stays a great challenge due to the energy gap law. Here, we report two NIR phosphorescent Ir(III) complexes which display emission peaks around 730 nm with a narrow full width at half maximum of only 43 nm. Therefore, pure NIR luminescence can be obtained without having a very long emission wavelength, thus alleviating the restriction of the energy gap law, and obtaining impressively high photoluminescence quantum yield up to 0.70. More importantly, the pure NIR organic light‐emitting diode (OLED) fabricated by the solution‐processed mothed shows outstanding device performance with the highest external quantum efficiency of 16.43 %, which sets a new record for solution‐processed NIR‐OLEDs based on different emitters. This work sheds light on the development of Ir(III) complexes with narrowband emissions as highly efficient pure NIR‐emitters.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

General Chemistry,Catalysis

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