An Unexpected Cubic Symmetry in Group IV Alloys Prepared Using Pressure and Temperature-Reference-Cited by-同舟云学术

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An Unexpected Cubic Symmetry in Group IV Alloys Prepared Using Pressure and Temperature

Published:2021-03-09 Issue:16 Volume:60 Page:9009-9014
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Serghiou George¹^ORCID,Reichmann Hans Josef²,Odling Nicholas³,Spektor Kristina⁴,Pakhomova Anna⁵,Crichton Wilson A.⁴,Konôpková Zuzana⁵⁶

Affiliation:

1. School of Engineering University of Edinburgh, Kings Buildings Robert Stevenson Road Edinburgh EH9 3FB Scotland UK

2. Deutsches GeoforschungsZentrum, GFZ Telegrafenberg 14473 Potsdam Germany

3. School of Geosciences University of Edinburgh, Kings Buildings West Mains Road Edinburgh EH9 3JW Scotland UK

4. The European Synchrotron, ESRF 71 avenue des Martyrs 38000 Grenoble France

5. Deutsches Elektronen-Synchrotron DESY 22607 Hamburg Germany

6. European XFEL GmbH Holzkoppel 4 22869 Schenefeld Germany

Publisher

Wiley

Subject

General Chemistry,Catalysis

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/anie.202016179

Reference36 articles.

1. Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies

2. Intrinsic Optical Absorption in Germanium-Silicon Alloys

3. Dense SixGe1–x (0 < x < 1) Materials Landscape Using Extreme Conditions and Precession Electron Diffraction

4. Lasing in direct-bandgap GeSn alloy grown on Si

5. The rise of the GeSn laser

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction;Applied Surface Science;2022-12

2. Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction;SSRN Electronic Journal;2022

3. Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature;Chemistry – A European Journal;2021-09-16

4. Unconventional Route to High-Pressure and -Temperature Synthesis of GeSn Solid Solutions;Journal of the American Chemical Society;2021-05-19

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