Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature-Reference-Cited by-同舟云学术

Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature

Published:2021-09-16 Issue:57 Volume:27 Page:14217-14224
ISSN:0947-6539
Container-title:Chemistry – A European Journal
language:en
Short-container-title:Chem. Eur. J.

Author:

Serghiou George¹,Odling Nicholas²,Reichmann Hans Josef³,Ji Gang⁴,Koch‐Müller Monika³,Frost Daniel J.⁵,Wright Jonathan P.⁶,Boehler Reinhard⁷,Morgenroth Wolfgang⁸⁹¹⁰

Affiliation:

1. University of Edinburgh School of Engineering Kings Buildings, Robert Stevenson Road Edinburgh EH9 3FB UK

2. University of Edinburgh School of Geosciences The Grant Institute Kings Buildings, West Mains Road Edinburgh EH9 3JW UK

3. Helmholtz Centre Potsdam German Research Centre for Geosciences Telegrafenberg 14473 Potsdam Germany

4. Univ. Lille CNRS, INRA, ENSCL, UMR CNRS 8207 UMET Unité Matériaux et Transformations 59000 Lille France

5. Bayerisches Geoinstitut University of Bayreuth 95540 Bayreuth Germany

6. European Synchrotron Radiation Facility 38043 Grenoble France

7. Oak Ridge National Laboratory Bethel Valley Rd Oak Ridge TN 37830 USA

8. Institute of Geosciences Goethe University Frankfurt 60438 Frankfurt am Main Germany

9. Deutsches Elektronen-Synchrotron (DESY) 22607 Hamburg Germany

10. University of Potsdam Institute of Geosciences 14476 Potsdam Germany

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/chem.202102595

Reference117 articles.

2. Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies

3. Intrinsic Optical Absorption in Germanium-Silicon Alloys

5. Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

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2. Structural and Functional Properties of Si and Related Semiconducting Materials Processed by High-Pressure Torsion;MATERIALS TRANSACTIONS;2023-07-01

3. First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes;Physical Review Materials;2023-06-08