1. F.Bjoerk J.Hancock M.Treu R.Rupp andT.Reimann “2nd Generation 600 V SiC schottky diodes use merged pn/Schottky structure for surge overload protection ” inProceedings from Applied Power Electronics Conference and Exposition 2006 19–23 March2006 CD Publication ISBN 0‐7803‐9548‐4.
2. M.Domeij A.Lindgren C.Zaring A. O.Konstantinov J. O.Svedberg K.Gumaelius I.Keri J.Grenell M.Oestling andM.Reimark “1200 V 6 A SiC BJTs with very low VCESATand fast switching ”Proceedings of PCIM Nuremberg 16–18 March2010.
3. R.Kelley G.Stewart A.Ritenour V.Bondarenko andD. C.Sheridan “1700 V Enhancement‐mode SiC VJFETfor high voltage auxiliary flyback SMPS ” inProceedings of PCIM Nuremberg 2010.
4. M.Treu R.Rupp P.Blaschitz K.Rueschenschmidt T.Sekinger P.Friedrichs R.Elpelt andD.Peters “Strategic considerations forunipolar SiC switch options: JFET vs. MOSFET ” inProceedings of IAS New Orleans 23–27 Sept.2007 pp.324–330.
5. A.AgarwalandS. H.Ryu “Status of SiC power devices and manufacturing issues ”Proceedings of CS MANTECH Conference Vancouver 2006 pp. 215–218.