Transparent silicon carbide/tunnel SiO 2 passivation for c‐Si solar cell front side: Enabling J sc > 42 mA/cm 2 and i V oc of 742 mV-Reference-Cited by-同舟云学术

Transparent silicon carbide/tunnel SiO 2 passivation for c‐Si solar cell front side: Enabling J sc > 42 mA/cm 2 and i V oc of 742 mV

Published:2020-01-16 Issue:4 Volume:28 Page:321-327
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Pomaska Manuel¹^ORCID,Köhler Malte¹^ORCID,Procel Moya Paul²^ORCID,Zamchiy Alexandr³⁴,Singh Aryak¹,Kim Do Yun¹,Isabella Olindo²^ORCID,Zeman Miro²,Li Shenghao¹⁵,Qiu Kaifu¹⁵,Eberst Alexander¹,Smirnov Vladimir¹,Finger Friedhelm¹,Rau Uwe¹^ORCID,Ding Kaining¹

Affiliation:

1. IEK5‐PhotovoltaicsForschungszentrum Jülich Wilhelm‐Johnen‐Strasse Jülich 52425 Germany

2. PVMD GroupDelft University of Technology Mekelweg 4 Delft 2628 CD The Netherlands

3. Novosibirsk State UniversityPhysics Department Pirogova St 2 Novosibirsk 630090 Russia

4. Kutateladze Institute of Thermophysics SB RASLaboratory of Rarefied Gases Ac. Lavrentiev Ave 1 Novosibirsk 630090 Russia

5. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic TechnologySun Yat‐sen University Guangzhou 510006 China

Funder

European Union's Horizon 2020 Program

German Academic Exchange Service (DAAD) and the Ministry of Education and Science of the Russian Federation

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3244

Reference28 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

3. Solar cell efficiency tables (version 54)

4. A passivating contact for silicon solar cells formed during a single firing thermal annealing

5. Current Losses at the Front of Silicon Heterojunction Solar Cells

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