Transparent silicon carbide/tunnel SiO 2 passivation for c‐Si solar cell front side: Enabling J sc > 42 mA/cm 2 and i V oc of 742 mV

Author:

Pomaska Manuel1ORCID,Köhler Malte1ORCID,Procel Moya Paul2ORCID,Zamchiy Alexandr34,Singh Aryak1,Kim Do Yun1,Isabella Olindo2ORCID,Zeman Miro2,Li Shenghao15,Qiu Kaifu15,Eberst Alexander1,Smirnov Vladimir1,Finger Friedhelm1,Rau Uwe1ORCID,Ding Kaining1

Affiliation:

1. IEK5‐PhotovoltaicsForschungszentrum Jülich Wilhelm‐Johnen‐Strasse Jülich 52425 Germany

2. PVMD GroupDelft University of Technology Mekelweg 4 Delft 2628 CD The Netherlands

3. Novosibirsk State UniversityPhysics Department Pirogova St 2 Novosibirsk 630090 Russia

4. Kutateladze Institute of Thermophysics SB RASLaboratory of Rarefied Gases Ac. Lavrentiev Ave 1 Novosibirsk 630090 Russia

5. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic TechnologySun Yat‐sen University Guangzhou 510006 China

Funder

European Union's Horizon 2020 Program

German Academic Exchange Service (DAAD) and the Ministry of Education and Science of the Russian Federation

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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