Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self-Assembled Quantum Dots-Reference-Cited by-同舟云学术

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Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self-Assembled Quantum Dots

Published:2008-03-25 Issue:6 Volume:18 Page:938-942
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Hsu Chih-Wei,Ganguly Abhijit,Liang Chi-Hui,Hung Yu-Ting,Wu Chien-Ting,Hsu Geng-Ming,Chen Yang-Fang,Chen Chia-Chun,Chen Kuei-Hsien,Chen Li-Chyong

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Incorporation of indium during molecular beam epitaxy of InGaN

4. Phase separation in InGaN grown by metalorganic chemical vapor deposition

5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

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1. Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE;Catalysts;2021-07-22

2. Orientation-tunable InxGa1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications;CrystEngComm;2021

3. Spontaneous CVD growth of InxGa1-xN/GaN core/shell nanowires for photocatalytic hydrogen generation;Applied Surface Science;2021-01

4. Recent progress in group III-nitride nanostructures: From materials to applications;Materials Science and Engineering: R: Reports;2020-10

5. In1−xGaxN@ZnO: a rationally designed and quantum dot integrated material for water splitting and solar harvesting applications;Dalton Transactions;2014-06-03

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