Affiliation:
1. Guangzhou Institute of Chemistry Chinese Academy of Sciences Guangzhou People's Republic of China
2. CAS Engineering Laboratory for Special Fine Chemicals Guangzhou People's Republic of China
3. University of Chinese Academy of Sciences Beijing People's Republic of China
4. China National Chemistry Southern Construction & Investment Co., Ltd Guangzhou People's Republic of China
5. CASH GCC Shaoguan Research Institute of Advanced Materials Nanxiong People's Republic of China
Abstract
AbstractA composite was prepared by in‐situ polymerization of liquid crystal epoxy (LCE4) with a low dielectric and high thermal conductivity boron nitride (BN) filler, which the filler (f‐BN) was surface‐functionalized by γ‐glycidoxypropyltrimethoxysilane (KH560) and aminopropylisobutyl polyhedral oligomeric silsesquioxane (NH2‐POSS). The surface‐functionalized BN was more uniformly dispersed in LCE4, which improved the interfacial compatibility between inorganic and organic phases. Compared with pure LCE4, KH560, and NH2‐POSS modified f‐BN/LCE4 composites exhibited a higher glass transition temperature, better thermal stability, and higher thermal conductivity. For example, when the f‐BN content reached 30 wt%, the energy storage modulus of the composite increased to 2580 MPa, and the glass transition temperature was 103°C. The thermal conductivity of this 30 wt% f‐BN composite was 0.48 W m−1 K−1, 128.6% higher than that of pure LCE4. In addition, thermal stability, low hygroscopicity, and dielectric properties of the composites were characterized and analyzed to explore the application prospects of f‐BN/LCE4 composites in electronic packaging and in high‐performance microelectronic devices.
Funder
Guangzhou Science and Technology Program key projects
Subject
Materials Chemistry,Polymers and Plastics,General Chemistry,Materials Chemistry,Polymers and Plastics,General Chemistry
Cited by
1 articles.
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