MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
2. MOCVD growth of InAsN for infrared applications
3. Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals
4. MOCVD Growth of InNxAs1?x on GaAs Using Dimethylhydrazine
5. RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
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1. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020
2. Pyrolysis of dimethylhydrazine for the MOVPE growth of GaN and InN monitored by in-situ quadrupole mass spectrometry;physica status solidi (c);2013-01-17
3. Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE;Infrared Physics & Technology;2012-09
4. III-V-N alloys grown by MOVPE in H 2 and N 2 mixed carrier gases;Quantum Sensing and Nanophotonic Devices IX;2012-01-21
5. Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE;Journal of Crystal Growth;2011-05
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