Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen-Reference-Cited by-同舟云学术

Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen

Published:2003-01 Issue:1 Volume:235 Page:115-120
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Nakanishi A.,Fukata N.,Suezawa M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Electron Radiation Damage in Semiconductors and Metals, Solid State Physics, Suppl. 7, edited by F. Seitz and D. Turnbull (Academic Press, New York, 1966); and references therein.

2. A new mechanism for interstistitial migration

3. Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si

4. Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon

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1. The VO Defect in Electron Irradiated Czochralski Silicon;Advanced Materials Research;2014-08

2. Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si;Advanced Materials Research;2012-01

3. µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon;Solid State Phenomena;2005-12

4. μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process;MRS Proceedings;2005

5. Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon;MRS Proceedings;2005