Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure-Reference-Cited by-同舟云学术

Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure

Published:2007-01 Issue:1 Volume:244 Page:32-37
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Franssen G.,Suski T.,Perlin P.,Bohdan R.,Trzeciakowski W.,Teisseyre H.,Khachapuridze A.,Targowski G.,Krowicki K.,Czernecki R.,Leszczyński M.,Kurouchi M.,Nanishi Y.,Lu H.,Schaff W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Solid phase immiscibility in GaInN

3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

4. Effect of pressure and temperature on AlGaInP and AlGaAs laser diodes

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