Raman scattering of capped and uncapped carbon-induced Ge dots under hydrostatic pressure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Raman scattering in germanium-silicon alloys under hydrostatic pressure
3. Raman analysis of Si/Ge strained‐layer superlattices under hydrostatic pressure
4. High pressure photoluminescence studies of carbon-induced germanium quantum dots grown on Si
5. Quantum confinement of quasi-two-dimensionalE1excitons in Ge nanocrystals studied by resonant Raman scattering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of alloy inhomogeneities on the determination by Raman scattering of composition and strain in Si1–xGex/Si(001) layers;Journal of Applied Physics;2012-07-15
2. Raman resonance in the strained Ge quantum dot array;Nanotechnology;2008-05-27
3. Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies;Nanotechnology;2007-10-17
4. Raman scattering interferences as a probe of vertical coherence in multilayers of carbon-induced Ge quantum dots;Physical Review B;2007-10-16
5. Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots;Applied Physics Letters;2007-08-20
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