Isovalent impurity-vacancy complexes in germanium-Reference-Cited by-同舟云学术

Isovalent impurity-vacancy complexes in germanium

Published:2007-09 Issue:9 Volume:244 Page:3206-3210
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Chroneos A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Suppressed diffusion of boron and carbon in carbon-rich silicon

2. Engineering the diffusion behavior of dopants (B,Sb) in silicon by incorporation of carbon

3. Nonequilibrium point defects and dopant diffusion in carbon-rich silicon

4. , , , and , Second International Workshop: Coordination Action on Defects Relevant to Engineering Silicon-Based Devices, Crete (Greece), 8–11 September 2006.

5. Implantation and diffusion of phosphorous in germanium

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