Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system-Reference-Cited by-同舟云学术

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Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system

Published:2003-03 Issue:1 Volume:236 Page:R1-R3
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Tonkikh A. A.,Dubrovskii V. G.,Cirlin G. E.,Egorov V. A.,Ustinov V. M.,Werner P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. , and , Quantum Dot Heterostructures, John Wiley & Sons, Chichester 1998.

2. Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

3. , and , Phys. Rev. B (submitted).

4. The physical origin of the two-dimensional towards three-dimensional coherent epitaxial Stranski-Krastanov transition

5. Equilibrium theory of the Stranski-Krastanov epitaxial morphology

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