Determination of the complex linear electro-optic coefficient of GaAs and InP
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. The electro‐optic coefficients of GaAs: Measurements at 1.32 and 1.52 μm and study of their dispersion between 0.9 and 10 μm
2. Electrooptic Properties and Raman Scattering in InP
3. Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs
4. Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs
5. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field
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4. GaAs: electro-optic coefficient;Landolt-Börnstein - Group III Condensed Matter;2012
5. InP: electro-optic coefficient;Landolt-Börnstein - Group III Condensed Matter;2012
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