Theoretical studies of semiconductors, with and without defects, under pressure-Reference-Cited by-同舟云学术

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Theoretical studies of semiconductors, with and without defects, under pressure

Published:2003-02 Issue:2 Volume:235 Page:374-383
ISSN:0370-1972
Container-title:physica status solidi (b)
language:
Short-container-title:phys. stat. sol. (b)

Author:

Christensen N.E.,Gorczyca I.,Svane A.,Gonzalez Szwacki N.,Boguslawski P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rhombohedral symmetry in GaAs1− x N x nanostructures;Semiconductor Science and Technology;2021-03-22

2. Condensed Matter Chemistry under High Pressure;PROG CHEM;2020

3. Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon;Journal of Materials Science: Materials in Electronics;2019-07-24

4. Electronic structure of and SnO under pressure;Journal of Physics and Chemistry of Solids;2006-09

5. Pressure and composition dependence of the electron effective mass in GaAs1–xNx;physica status solidi (b);2006-06

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