Carrier capture times in InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Carrier capture times in InGaN/GaN multiple quantum wells

Published:2003-11 Issue:2 Volume:240 Page:364-367
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Fan W. H.,Olaizola S. M.,Wang T.,Parbrook P. J.,Wells J.-P. R.,Mowbray D. J.,Skolnick M. S.,Fox A. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect;Results in Physics;2022-03

2. Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation;Crystals;2020-11-13

3. High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector;ACS Photonics;2019-04-25

4. Energy Transfer between Cyano-Ether PPV and InGaN/GaN Quantum Wells with Large Piezoelectric Fields;physica status solidi (a);2018-07-19

5. Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures;Journal of Applied Physics;2017-08-14

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