Author:
Teubert J.,Klar P. J.,Heimbrodt W.,Gottschalch V.,Lindsay A.,O'Reilly E. P.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
10 articles.
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1. Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method;Journal of Applied Physics;2012-09-15
2. Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B,Ga,In)As;Physical Review B;2011-06-30
3. Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure;Physical Review B;2011-01-13
4. Seebeck coefficients of n-type (Ga,In)(N,As), (B,Ga,In)As, and GaAs;Applied Physics Letters;2008-07-28
5. Electron effective mass and Si-donor binding energy inGaAs1−xNxprobed by a high magnetic field;Physical Review B;2008-03-12