Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Present status of InGaN/GaN/AlGaN-based laser diodes
2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
3. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
4. Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
5. Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
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1. Polychromatic X-ray micro- and nanodiffraction for spatially-resolved structural studies;Thin Solid Films;2008-09
2. High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2007-11-26
3. Defect studies in HVPE GaN by positron annihilation spectroscopy;SPIE Proceedings;2007-02-08
4. Nearly stress-free substrates for GaN homoepitaxy;Journal of Crystal Growth;2006-08
5. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction;physica status solidi (b);2006-06
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