Impact of Defect-Induced Strain on Device Properties-Reference-Cited by-同舟云学术

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Impact of Defect-Induced Strain on Device Properties

Published:2016-12-30 Issue:8 Volume:19 Page:1600736
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Reiche Manfred¹,Kittler Martin²,Pippel Eckhard¹,Uebensee Hartmut³,Kosina Hans⁴,Grill Alexander⁴,Stanojevic Zlatan⁵,Baumgartner Oskar⁵

Affiliation:

1. Max Planck Institute of Microstructure Physics; Weinberg 2 D-06120 Halle Germany

2. Brandenburg University of Technology; Erich-Weinert-Str. 1 03046 Cottbus Germany

3. CIS Research Institute of Microsensorics; Konrad-Zuse-Str. 14 99099 Erfurt Germany

4. Institute of Microelectronics; Vienna University of Technology; Gußhausstr. 27-29 1040 Vienna Austria

5. Global TCAD Solutions; Bösendorferstr. 1/12 1010 Vienna Austria

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adem.201600736/fullpdf

Reference18 articles.

1. Extended Defects in Semiconductors

2. (Invited) Defect Generation in Device Processing and Impact on the Electrical Performances

3. Silicon Device Scaling to the Sub-10-nm Regime

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The physics of mid-infrared semiconductor materials and heterostructures;Mid-infrared Optoelectronics;2020

2. Transport of Charge Carriers along Dislocations in Si and Ge;physica status solidi (a);2019-07-17

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