Gate-Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures-Reference-Cited by-同舟云学术

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Gate-Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

Published:2018-04-16 Issue:7 Volume:20 Page:1800159
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Iqbal Muhammad Zahir¹^ORCID,Siddique Salma²,Khan Muhammad Farooq³,Rehman Atteq ur⁴,Rehman Adil¹,Eom Jonghwa³

Affiliation:

1. Faculty of Engineering Sciences; GIK Institute of Engineering Sciences and Technology; Topi Khyber Pakhtunkhwa 23640 Pakistan

2. Institute of Industrial Biotechnology; GC University Lahore; Lahore 54000 Pakistan

3. Department of Physics & Graphene Research Institute; Sejong University; Seoul 143-747 Korea

4. Department of Electrical Engineering; Sarhad University of Science and Information Technology; Peshawar Pakistan

Funder

Higher Education Commission, Pakistan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference38 articles.

1. The rise of graphene

2. A roadmap for graphene

3. Enhanced intervalley scattering of aluminum oxide-deposited graphene

4. Graphene photonics and optoelectronics

5. Roll-to-roll production of 30-inch graphene films for transparent electrodes

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1. Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS2;Nanoscale;2021

2. Building Functional Memories and Logic Circuits with 2D Boron Nitride;Advanced Functional Materials;2020-09-28

3. Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode;Nanoscale;2020

4. Rectifying behavior in twisted bilayer black phosphorus nanojunctions mediated through intrinsic anisotropy;Nanoscale Advances;2020

5. Spin-valve effect of 2D-materials based magnetic junctions;Spintronic 2D Materials;2020

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