Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS2-Reference-Cited by-同舟云学术

Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS2

Published:2021 Issue:44 Volume:13 Page:18726-18733
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Grzeszczyk Magdalena¹^ORCID,Olkowska-Pucko Katarzyna¹^ORCID,Nogajewski Karol¹,Watanabe Kenji²^ORCID,Taniguchi Takashi³,Kossacki Piotr¹,Babiński Adam¹^ORCID,Molas Maciej R.¹^ORCID

Affiliation:

1. Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 02-093 Warsaw, Poland

2. Research Center for Functional Materials, National Institute for Materials Science, 305-0044, Japan

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 305-0044, Japan

Abstract

Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment.

Funder

Graphene Flagship

Fundacja na rzecz Nauki Polskiej

Centre National de la Recherche Scientifique

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Narodowe Centrum Nauki

Core Research for Evolutional Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR03855A

Reference58 articles.

1. Heterostructures based on two-dimensional layered materials and their potential applications

2. Van der Waals heterostructures

3. Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

4. An origin of unintentional doping in transition metal dichalcogenides: the role of hydrogen impurities

5. Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening

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