Bandgap engineering of Ga x Zn1-x O nanowire arrays for wavelength-tunable light-emitting diodes-Reference-Cited by-同舟云学术

Bandgap engineering of Ga x Zn1-x O nanowire arrays for wavelength-tunable light-emitting diodes

Published:2014-04-02 Issue:3 Volume:8 Page:429-435
ISSN:1863-8880
Container-title:Laser & Photonics Reviews
language:en
Short-container-title:Laser & Photonics Reviews

Author:

Zhang Xianghui¹,Li Luying¹,Su Jun¹,Wang Yumei¹,Shi Yuling¹,Ren Xiaoliang¹,Liu Nishuang¹,Zhang Aiqing²,Zhou Jun¹,Gao Yihua¹

Affiliation:

1. Center for Nanoscale characterization & Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO)-School of Physics-School of Optical and Electronic Information; Huazhong University of Science and Technology (HUST); Luoyu Road 1037 Wuhan 430074 China

2. Key Laboratory of Catalysis and Materials Science of the State Ethnic Affairs Commission-Ministry of Education; South-Central University for Nationalities; Wuhan 430074 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Foundation for the Author of National Excellent Doctoral Dissertation of China

Publisher

Wiley

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/lpor.201300172/fullpdf

Reference35 articles.

1. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes